منابع مشابه
TCAD News, September 2008
As new materials and novel device designs are needed to further CMOS and memorydevice scaling, a range of advanced physical models has been added to TCAD Sentaurus Version A-2008.09 to allow users to explore these technology options. While high-k dielectrics and metal gate stacks are more widely adopted, further optimization is necessary to ensure its production worthiness and high yield. It is...
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ژورنال
عنوان ژورنال: Nature
سال: 2008
ISSN: 0028-0836,1476-4687
DOI: 10.1038/456844a